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Dual GaN RF Transistor for mMIMO

RFMW announces design and sales support for a low cost, dual transistor. The Qorvo QPD0210 offers two, high-performance transistors in a 7 x 6.5 mm, thermally enhanced package.

The QPD0210 has an operating range of 1800 to 2700 MHz with a saturated output power of 16.6 Watts (42.2 dBm). Drain efficiency is 71.9% with linear gain of 18.8 dB. Developed for 5G massive MIMO base stations and active antennas, the device supports symmetric Doherty applications.

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